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RJP65S04DWT Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJP65S04DWT Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 4 page RJP65S04DWT/RJP65S04DWA Preliminary R07DS0821EJ0002 Rev.0.02 Page 2 of 3 Aug 09, 2012 Electrical Characteristics (These data are an actual measurement value in evaluation package.) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current ICES — — 1 A VCE = 650 V, VGE = 0 Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 5.0 — 6.8 V VCE = 10 V, IC = 1.0mA Collector to emitter saturation voltage VCE(sat) — 1.60 1.95 V IC = 50 A, VGE = 15 V Note2 Input capacitance Cies — 4.5 — nF Output capacitance Coes — 0.2 — nF Reveres transfer capacitance Cres — 0.15 — nF VCE = 25 V VGE = 0 f = 1 MHz td(on) — 30 — ns tr — 30 — ns td(off) — 200 — ns Switching time tf — 80 — ns VCC = 300 V Note3 IC = 50 A VGE =±15 V Rg = 10 , Tj = 125 C Inductive load Short circuit withstand time tsc 10 — — s VCC 360 V , VGE = 15 V Tj = 150 C Notes: 2. Pulse test. 3. Switching time test circuit and waveform are shown below. Switching Time Test Circuit Waveform Diode clamp D.U.T Rg L VCC td(off) td(on) tf tr 90% 90% 90% 10% 10% 10% VGE IC |
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