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H5TQ1G83DFRPBL Datasheet(PDF) 10 Page - Hynix Semiconductor

Part # H5TQ1G83DFRPBL
Description  1Gb DDR3 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5TQ1G83DFRPBL Datasheet(HTML) 10 Page - Hynix Semiconductor

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Rev. 1.7 /Sep. 2011
10
Absolute Maximum Ratings
Absolute Maximum DC Ratings
DRAM Component Operating Temperature Range
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,3
VIN, VOUT Voltage on any pin relative to Vss
- 0.4 V ~ 1.975 V
V
1
TSTG
Storage Temperature
-55 to +100
o
C1, 2
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Temperature Range
Symbol
Parameter
Rating
Units
Notes
TOPER
Normal Operating Temperature Range
0 to 85
o
C
1,2
Extended Temperature Range (Optional)
85 to 95
o
C1,3
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure-
ment conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-
ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are supported in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It is
also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)
or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b).


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