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H5TQ1G63DFR-N0C Datasheet(PDF) 84 Page - Hynix Semiconductor

Part # H5TQ1G63DFR-N0C
Description  1Gb DDR3 SDRAM
Download  172 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5TQ1G63DFR-N0C Datasheet(HTML) 84 Page - Hynix Semiconductor

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Rev. 1.1 /Jan. 2011
84
2.13.3 Burst Read Operation followed by a Precharge
The minimum external Read command to Precharge command spacing to the same bank is equal to AL +
tRTP with tRTP being the Internal Read Command to Precharge Command Delay. Note that the minimum
ACT to PRE timing, tRAS, must be satisfied as well. The minimum value for the Internal Read Command to
Precharge Command Delay is given by tRTP.MIN = max(4 x nCK, 7.5 ns). A new bank active command may
be issued to the same bank if the following tow conditions are satisfied simultaneously:
1. The minimum RAS precharge time (tRP.MIN) has been satisfied from the clock at which the precharge
begins.
2. The minimum RAS cycle time (tRC.MIN) from the previous bank activation has been satisfied.
Examples of Read commands followed by Precharge are show in Figure 40 and Figure 41.
Figure 37. READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5
Figure 40. READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5
Figure 41. READ to PRECHARGE, RL = 8, AL = CL - 2, CL = 5, tRTP = 6, tRP = 5
T0
CK#
CK
ADDRESS
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
PRE
NOP
NOP
ACT
NOP
NOP
NOP
RL = AL + CL
DQ
DO
n
D)
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
TRANSITIONING DATA
DON’T CARE
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
Bank.
Col n
Bank a,
(or all)
DO
n
DO
n+1
DO
n+1
DO
n+2
DO
n+3
NOTE: 1. RL=5 (CL=5, AL=0)
2. Dout n = data-out from column n
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. The example assumes tRAS. MIN is satisfied at Precharge command time (T5) and that tRC. MIN is satisfied at the next Active command time (T10).
T15
NOP
NOP
BL4 Operation:
COMMAND
DQS, DQS#
READ
Bank a,
Row b
tRTP
tRP
DQ
DQS, DQS#
BL8 Operation:
T0
CK#
CK
ADDRESS
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
PRE
NOP
NOP
ACT
NOP
NOP
NOP
RL = AL + CL
DQ
DO
n
D)
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
TRANSITIONING DATA
DON’T CARE
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
Bank.
Col n
Bank a,
(or all)
DO
n
DO
n+1
DO
n+1
DO
n+2
DO
n+3
NOTE: 1. RL=5 (CL=5, AL=0)
2. Dout n = data-out from column n
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. The example assumes tRAS. MIN is satisfied at Precharge command time (T5) and that tRC. MIN is satisfied at the next Active command time (T10).
T15
NOP
NOP
BL4 Operation:
COMMAND
DQS, DQS#
READ
Bank a,
Row b
tRTP
tRP
DQ
DQS, DQS#
BL8 Operation:
T0
CK#
CK
ADDRESS
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
PRE
NOP
NOP
NOP
NOP
NOP
NOP
CL = 5
DQ
DO
n
D)
n+2
DO
n+3
DO
n+4
DO
n+5
DO
n+6
DO
n+7
TRANSITIONING DATA
DON’T CARE
T11
T12
T13
T14
NOP
NOP
NOP
NOP
ACT
NOP
Bank a,
Col n
Bank a,
(or all)
DO
n
DO
n+1
DO
n+1
DO
n+2
DO
n+3
NOTE: 1. RL = 8 (CL = 5, AL = CL - 2)
2. Dout n = data-out from column n
3. NOP commands are shown for ease of illustration; other commands may be valid at these times.
4. The example assumes tRAS. MIN is satisfied at Precharge command time (T10) and that tRC. MIN is satisfied at the next Active command time (T15).
T15
NOP
NOP
BL4 Operation:
COMMAND
DQS, DQS#
READ
Bank a,
Row b
AL = CL ? 2 =3
tRTP
DQ
DQS, DQS#
BL8 Operation:
tRP


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