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H5TQ1G63DFR-N0C Datasheet(PDF) 84 Page - Hynix Semiconductor |
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H5TQ1G63DFR-N0C Datasheet(HTML) 84 Page - Hynix Semiconductor |
84 / 172 page Rev. 1.1 /Jan. 2011 84 2.13.3 Burst Read Operation followed by a Precharge The minimum external Read command to Precharge command spacing to the same bank is equal to AL + tRTP with tRTP being the Internal Read Command to Precharge Command Delay. Note that the minimum ACT to PRE timing, tRAS, must be satisfied as well. The minimum value for the Internal Read Command to Precharge Command Delay is given by tRTP.MIN = max(4 x nCK, 7.5 ns). A new bank active command may be issued to the same bank if the following tow conditions are satisfied simultaneously: 1. The minimum RAS precharge time (tRP.MIN) has been satisfied from the clock at which the precharge begins. 2. The minimum RAS cycle time (tRC.MIN) from the previous bank activation has been satisfied. Examples of Read commands followed by Precharge are show in Figure 40 and Figure 41. Figure 37. READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5 Figure 40. READ to PRECHARGE, RL = 5, AL = 0, CL = 5, tRTP = 4, tRP = 5 Figure 41. READ to PRECHARGE, RL = 8, AL = CL - 2, CL = 5, tRTP = 6, tRP = 5 T0 CK# CK ADDRESS T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 PRE NOP NOP ACT NOP NOP NOP RL = AL + CL DQ DO n D) n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 TRANSITIONING DATA DON’T CARE T11 T12 T13 T14 NOP NOP NOP NOP NOP NOP Bank. Col n Bank a, (or all) DO n DO n+1 DO n+1 DO n+2 DO n+3 NOTE: 1. RL=5 (CL=5, AL=0) 2. Dout n = data-out from column n 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. The example assumes tRAS. MIN is satisfied at Precharge command time (T5) and that tRC. MIN is satisfied at the next Active command time (T10). T15 NOP NOP BL4 Operation: COMMAND DQS, DQS# READ Bank a, Row b tRTP tRP DQ DQS, DQS# BL8 Operation: T0 CK# CK ADDRESS T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 PRE NOP NOP ACT NOP NOP NOP RL = AL + CL DQ DO n D) n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 TRANSITIONING DATA DON’T CARE T11 T12 T13 T14 NOP NOP NOP NOP NOP NOP Bank. Col n Bank a, (or all) DO n DO n+1 DO n+1 DO n+2 DO n+3 NOTE: 1. RL=5 (CL=5, AL=0) 2. Dout n = data-out from column n 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. The example assumes tRAS. MIN is satisfied at Precharge command time (T5) and that tRC. MIN is satisfied at the next Active command time (T10). T15 NOP NOP BL4 Operation: COMMAND DQS, DQS# READ Bank a, Row b tRTP tRP DQ DQS, DQS# BL8 Operation: T0 CK# CK ADDRESS T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 PRE NOP NOP NOP NOP NOP NOP CL = 5 DQ DO n D) n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 TRANSITIONING DATA DON’T CARE T11 T12 T13 T14 NOP NOP NOP NOP ACT NOP Bank a, Col n Bank a, (or all) DO n DO n+1 DO n+1 DO n+2 DO n+3 NOTE: 1. RL = 8 (CL = 5, AL = CL - 2) 2. Dout n = data-out from column n 3. NOP commands are shown for ease of illustration; other commands may be valid at these times. 4. The example assumes tRAS. MIN is satisfied at Precharge command time (T10) and that tRC. MIN is satisfied at the next Active command time (T15). T15 NOP NOP BL4 Operation: COMMAND DQS, DQS# READ Bank a, Row b AL = CL ? 2 =3 tRTP DQ DQS, DQS# BL8 Operation: tRP |
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