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H5TC1G83EFRPBI Datasheet(PDF) 10 Page - Hynix Semiconductor

Part # H5TC1G83EFRPBI
Description  1Gb DDR3L SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5TC1G83EFRPBI Datasheet(HTML) 10 Page - Hynix Semiconductor

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Rev. 1.0 /July. 2012
10
Absolute Maximum Ratings
Absolute Maximum DC Ratings
DRAM Component Operating Temperature Range
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,3
VIN, VOUT Voltage on any pin relative to Vss
- 0.4 V ~ 1.975 V
V
1
TSTG
Storage Temperature
-55 to +100
oC1, 2
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
Temperature Range
Symbol
Parameter
Rating
Units
Notes
TOPER
Normal Operating Temperature Range
0 to 85
oC
1,2
Industrial Temperature Range
-40 to 95
oC1,3
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure-
ment conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. Dur-
ing operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs.
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to use the Man-
ual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b).


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