RJF0610JSP

Target Specifications

R07DS0568EJ0200 Rev.2.00

Page 2 of 7

Apr 16, 2012

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

3.5

—

—

V

Input voltage

—

—

1.2

V

—

—

100

A

—

—

50

A

Input current

(Gate non shut down)

—

—

1

A

—

0.4

—

mA

—

0.24

—

mA

Input current

(Gate shut down)

—

0.16

—

mA

Shut down temperature

Tsd

—

175

—

C

Channel temperature

Return temperature

Thr

—

120

—

C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

1.5

—

—

A

Note 5

Notes; 5. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

—

—

2.4

A

—

—

10

mA

Drain current

1.5

—

—

—

Note 6

Drain to source breakdown voltage

60

—

—

V

16

—

—

V

Gate to source breakdown voltage

–2.5

—

—

V

—

—

100

A

—

—

50

A

—

—

1

A

Gate to source leak current

—

—

–100

A

—

0.4

—

mA

—

0.24

—

mA

Input current (shut down)

—

0.16

—

mA

—

—

10

A

Zero gate voltage drain current

—

—

10

A

Ta = 125

C

Gate to source cutoff voltage

1.4

—

2.5

V

—

207

285

m



Note 6

Static drain to source on state

resistance

—

153

214

m



Note 6

Output capacitance

Coss

—

267

—

pF

Turn-on delay time

—

4.3

—

s

Rise time

—

18.3

—

s

Turn-off delay time

—

0.62

—

s

Fall time

—

0.61

—

s

Body-drain diode forward voltage

—

0.8

—

V

Body-drain diode reverse recovery

time

—

55

—

ns

—

18

—

ms

Over load shut down

operation time

Note 7

—

5.7

—

ms

Notes: 6. Pulse test

7. Including the junction temperature rise of the over loaded condition.