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RJF0604DPD Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJF0604DPD
Description  Silicon N Channel MOS FET Series Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJF0604DPD Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJF0604DPD
Target Specifications
R07DS0713EJ0100 Rev.1.00
Page 2 of 7
Apr 17, 2012
Typical Operation Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
VIH
3.5
V
Input voltage
VIL
1.2
V
IIH1
100
A
Vi = 8 V, VDS = 0
IIH2
50
A
Vi = 3.5 V, VDS = 0
Input current
(Gate non shut down)
IIL
1
A
Vi = 1.2 V, VDS = 0
IIH(sd)1
0.8
mA
Vi = 8 V, VDS = 0
Input current
(Gate shut down)
IIH(sd)2
0.35
mA
Vi = 3.5 V, VDS = 0
Shut down temperature
Tsd
175
C
Channel temperature
Gate operation voltage
Vop
3.5
12
V
Drain current
(Current limitation value)
ID limt
5
A
VGS = 5 V, VDS = 10 V
Note 4
Note;
4. Pulse test
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
ID1
17
A
VGS = 3.5 V, VDS = 10 V
Note 5
ID2
10
mA
VGS = 1.2 V, VDS = 10 V
Drain current
ID3
5
A
VGS = 5 V, VDS = 10 V
Note 5
Drain to source breakdown
voltage
V(BR)DSS
60
V
ID = 10 mA, VGS = 0
V(BR)GSS
16
V
IG = 800 A, VDS = 0
Gate to source breakdown
voltage
V(BR)GSS
–2.5
V
IG = –100 A, VDS = 0
IGSS1
100
A
VGS = 8 V, VDS = 0
IGSS2
50
A
VGS = 3.5 V, VDS = 0
IGSS3
1
A
VGS = 1.2 V, VDS = 0
Gate to source leak current
IGSS4
–100
A
VGS = –2.4 V, VDS = 0
IGS(OP)1
0.8
mA
VGS = 8 V, VDS = 0
Input current (shut down)
IGS(OP)2
0.35
mA
VGS = 3.5 V, VDS = 0
Zero gate voltage drain current
IDSS
10
A
VDS = 32 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.1
2.1
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
4
9
S
ID = 2.5 A, VDS = 10 V
Note 5
RDS(on)
58
100
m
ID = 2.5 A, VGS = 4 V
Note 5
Static drain to source on state
resistance
RDS(on)
42
75
m
ID = 2.5 A, VGS = 10 V
Note 5
Output capacitance
Coss
276
pF
VDS = 10 V, VGS = 0, f = 1MHz
Turn-on delay time
td(on)
1.6
s
Rise time
tr
4.7
s
Turn-off delay time
td(off)
3.7
s
Fall time
tf
4.4
s
VGS = 10 V, ID= 2.5 A, RL = 12 
Body-drain diode forward
voltage
VDF
0.81
V
IF = 5 A, VGS = 0
Body-drain diode reverse
recovery time
trr
67
ns
IF = 5 A, VGS = 0
diF/dt = 50 A/s
tos1
3.4
ms
VGS = 5 V, VDD = 16 V
Over load shut down
operation time
Note 6
tos2
1.2
ms
VGS = 5 V, VDD = 24 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.


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