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SFH620A-1 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SFH620A-1
Description  Optocoupler, Phototransistor Output, AC Input
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SFH620A-1 Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83675
2
Rev. 1.9, 23-Feb-11
SFH620A, SFH6206
Vishay Semiconductors Optocoupler, Phototransistor Output,
AC Input
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Still air, coupler soldered to PCB or base.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
DC forward current
IF
± 60
mA
Surge forward current
tp  10 μs
IFSM
± 2.5
A
Power dissipation
Pdiss
100
mW
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7V
Collector current
IC
50
mA
tp  1 μs
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter and detector
t = 1 s
VISO
5300
VRMS
Isolation voltage
VIORM
890
VP
Total power dissipation
Ptot
250
mW
Creepage distance
7mm
Clearance distance
7mm
Insulation thickness between emitter and detector
4mm
Comparative tracking index per DIN IEC112/
VDE 0303, part 1
CTI
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Storage temperature range
Tstg
- 55 to + 150
°C
Ambient temperature range
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
max. 10 s, dip soldering distance
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 60 mA
VF
1.25
1.65
V
Capacitance
VR = 0 V, f = 1 MHz
CO
50
pF
Thermal resistance
Rthja
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
6.8
pF
Thermal resistance
Rthja
500
°C/W
COUPLER
Collector emitter saturation voltage
IF = ± 10 mA, IC = 2.5 mA
VCEsat
0.25
0.4
V
Coupling capacitance
CC
0.2
pF
Collector emitter leakage current
VCE = 10 V
SFH620A-1
ICEO
250
nA
SFH6206-1
ICEO
250
nA
SFH620A-2
ICEO
250
nA
SFH6206-2
ICEO
250
nA
SFH620A-3
ICEO
5
100
nA
SFH6206-3
ICEO
5
100
nA


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