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FODM3022 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FODM3022 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 12 page ©2003 Fairchild Semiconductor Corporation www.fairchildsemi.com FODM30XX Rev. 1.0.6 3 Electrical Characteristics (T A = 25°C) Individual Component Characteristics Transfer Characteristics Isolation Characteristics *All typicals at TA = 25°C Notes: 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. See Figure 1 for test circuit Commutating dv/dt is function of the load-driving thyristor(s) only. 3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies between max IFT (10mA for FODM3011, FODM3022, and FODM3052, 5mA for FODM3012, FODM3023, and FODM3053) and absolute max IF (60mA). Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit EMITTER VF Input Forward Voltage IF = 10mA All 1.20 1.5 V IR Reverse Leakage Current VR = 3V, TA = 25°C All 0.01 100 µA DETECTOR IDRM Peak Blocking Current Either Direction Rated VDRM, IF = 0 (1) All 2 100 nA dV/dt Critical Rate of Rise of Off-State Voltage IF = 0 (Figure 8) (2) FODM3011, FODM3012, FODM3022, FODM3023 10 V/µs FODM3052, FODM3053 1,000 Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Unit IFT LED Trigger Current Main Terminal Voltage = 3V(3) FODM3011, FODM3022, FODM3052 10 mA FODM3012, FODM3023, FODM3053 5 IH Holding Current, Either Direction All 300 µA VTM Peak On-State Voltage Either Direction ITM = 100mA peak All 1.7 3 V Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit VISO Steady State Isolation Voltage 1 Minute, R.H. = 40% to 60% All 3750 VRMS |
Similar Part No. - FODM3022 |
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Similar Description - FODM3022 |
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