FCPF600N60Z datasheet(3/10 Pages) FAIRCHILD

Part #	FCPF600N60Z

Description	N-Channel SuperFET짰 II MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FCP600N60Z / FCPF600N60Z Rev. C2

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

234

567

8

0.2

1

10

50

-55

o

C

150

o

C

*Notes:

1. VDS = 20V

2. 250

μs Pulse Test

25

o

C

VGS, Gate-Source Voltage[V]

0.2

1

10

20

0.4

1

10

20

*Notes:

1. 250

μs Pulse Test

2. TC = 25

o

C

VDS, Drain-Source Voltage[V]

VGS = 10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

0.20.4

0.60.8

1.01.2

1.4

1

10

100

*Notes:

1. V

GS = 0V

2. 250

μs Pulse Test

150

o

C

V

SD

, Body Diode Forward Voltage [V]

25

o

C

0

4

8

12

16

20

0.2

0.4

0.6

0.8

1.0

1.2

*Note: TC = 25

o

C

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0.1

1

10

100

600

0.5

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain-Source Voltage [V]

0

5

10

15

20

25

0

2

4

6

8

10

*Note: ID = 3.7A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

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