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KSC2690 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSC2690 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Symbol Parameter Value Units VCBO Collector-Base Voltage : KSC2690 : KSC2690A 120 160 V V VCEO Collector- Emitter Voltage : KSC2690 : KSC2690A 120 160 V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1.2 A ICP *Collector Current (Pulse) 2.5 A IB Base Current(DC) 0.3 A PC Collector Dissipation (Ta=25°C) 1.2 W PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 120V, IE = 0 1 µA IEBO Emitter Cut-off Current VEB = 3V, IC= 0 1 µA hFE1 hFE2 * DC Current Gain VCE = 5V, IC = 5mA VCE = 5V, IC = 0.3A 35 60 105 140 320 VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.4 0.7 V VBE(sat) * Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A 1 1.3 V fT Current Gain Bandwidth Product VCE = 5V, IC = 0.2A 155 MHz Cob Output Capacitance VCB =10V, IE =0, f = 1MHz 19 pF Classification R O Y hFE2 60 ~ 120 100 ~ 200 160 ~ 320 KSC2690/2690A Audio Frequency High Frequency Power Amplifier • Complement to KSA1220/KSA1220A 1 TO-126 1. Emitter 2.Collector 3.Base |
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