IXGN400N30A3 datasheet(1/2 Pages) IXYS

Part #	IXGN400N30A3

Description	Ultra-Low-Vsat PT IGBT for up to 10kHz Switching

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

CES

T

J = 25°C to 150°C

300

V

CGR

T

J = 25°C to 150°C, RGE = 1MΩ

300

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C (Chip Capability)

400

A

I

C110

T

C = 110°C

200

A

I

LRMS

Terminal Current Limit

200

A

I

CM

T

C = 25°C, 1ms

1200

A

SSOA

V

GE = 15V, TVJ = 125°C, RG = 1Ω

I

CM = 400

A

(RBSOA)

Clamped Inductive Load

@ 0.8 • V

CES

V

P

C

T

C = 25°C

735

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60Hz

t = 1min

2500

V~

I

ISOL ≤ 1mA

t = 1s

3000

V~

M

d

Mounting Torque

1.5/13

Nm/lb.in.

Terminal Connection Torque (M4)

1.3/11.5

Nm/lb.in.

Weight

30

g

Features

Optimized for Low Conduction Losses

High Current Capability

International Standard Package

miniBLOC, with Aluminium Nitride

Isolation

Advantages

High Power Density

Low Gate Drive Requirement

Applications

Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Inrush Current Protection Circuits

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 1mA, V

GE = 0V

300

V

GE(th)

I

C

= 4mA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = VCES, VGE = 0V

50 μA

T

J = 125°C

2 mA

I

GES

V

CE = 0V, VGE = ±20V

±400 nA

V

CE(sat)

I

C

= 100A, V

GE = 15V, Note 1

1.15

V

I

C

= 400A

1.70

V

DS99592B(7/09)

GenX3TM 300V IGBT

IXGN400N30A3

V

CES

= 300V

I

C25

= 400A

V

CE(sat) ≤

≤≤≤≤ 1.15V

SOT-227B, miniBLOC

G = Gate, C = Collector, E = Emitter

Either Emitter Terminal Can Be Used

as Main or Kelvin Emitter

G

E

C

E153432

Ultra-Low-Vsat PT IGBT for

up to 10kHz Switching

E

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IXGN400N30A3 Datasheet(PDF) 1 Page - IXYS Corporation

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