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DPG80C400HB Datasheet(PDF) 1 Page - IXYS Corporation |
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DPG80C400HB Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 4 page DPG 60 C 400 HB ns HiPerFRED² Symbol Definition R a t i n g s Features / Advantages: typ. max. I FSM I R A V 360 I A V F 1.41 R 0.95 K/W V R = 1 2 3 min. 30 t = 10 ms Applications: VRRM V 400 1 T VJ V°C = T VJ °C =mA 0.2 Package: Part number V R = T VJ =°C I F =A V TC = 135°C d = P tot 160 W TC °C = T VJ 175 °C -55 V I RRM = = 400 30 30 T VJ = 45°C DPG 60 C 400 HB V A 400 V 400 25 25 25 max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 1.69 TVJ °C =25 C J junction capacitance V = V; T 150 V F0 V 0.76 T VJ = 175°C rF 10.7 f = 1 MHz = °C 25 mΩ V 1.13 TVJ =°C IF =A V 30 1.46 I F =A 60 IF =A 60 2x threshold voltage slope resistance for power loss calculation only Backside: cathode 4A T VJ =°C reverse recovery time A 8.5 45 85 ns (50 Hz), sine t rr = 45 ns ● Housing: High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode TO-247 ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant R VJ I RM max. reverse recovery current IF =A; 30 25 T= 125°C VJ -diF =A/µs 200 /dt t rr VR =V 270 TVJ =°C 25 T= 125°C VJ µA 39 200 pF thermal resistance junction to case thJC rectangular 0.5 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) FAV average forward current FAV 150 IXYS reserves the right to change limits, conditions and dimensions. © 20100125a Data according to IEC 60747and per diode unless otherwise specified 2010 IXYS all rights reserved |
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