RJK1212DNS-00-J5 datasheet(5/7 Pages) RENESAS

Part #	RJK1212DNS-00-J5

Description	120V, 3A, 310m max. Silicon N Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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5 / 7 page

RJK1212DNS

Preliminary

R07DS0092EJ0400 Rev.4.00

Page 5 of 6

Apr 11, 2013

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

Vin

15 V

0

ID

VDS

IAP

V(BR)DSS

L

VDD

EAS =

L

• I

AP

2

•

2

1

VDSS

VDSS – VDD

Vin Monitor

D.U.T.

Vin

10 V

RL

VDS

= 50 V

tr

td(on)

Vin

90%

10%

Vout

td(off)

Vout

Monitor

90%

10%

tf

Rg

Switching Time Test Circuit

Switching Time Waveform

3

1

0.1

0.3

0.01

0.03

10

μ

100

μ

1 m

10 m

100 m

1

10

Pulse Width PW (s)

Normalized Transient Thermal Impedance vs. Pulse Width

PDM

PW

T

D =

PW

T

ch – c(t) = s (t) •

ch – c

ch – c = 12.5

°C/W, Tc = 25°C

θ

γ

θ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot

pulse

Avalanche Test Circuit

Avalanche Waveform

50

Ω

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RJK1212DNS-00-J5 Datasheet(PDF) 5 Page - Renesas Technology Corp

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