RJK1028DNS-00-J5 datasheet(1/7 Pages) RENESAS

Part #	RJK1028DNS-00-J5

Description	100V, 4A, 165m max. Silicon N Channel Power MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0195EJ0400 Rev.4.00

Page 1 of 6

Apr 11, 2013

Preliminary Datasheet

RJK1028DNS

100V, 4A, 165m

 max.

Silicon N Channel Power MOS FET

Power Switching

Features

 High speed switching

 Capable of 4.5 V gate drive

 Low drive current

 High density mounting

 Low on-resistance

RDS(on) = 125 m typ. (at VGS = 10 V)

 Pb-free

 Halogen-free

Outline

RENESAS Package code: PWSN0008JB-A

(Package name: HWSON-8)

G

D

SS S

DD D

4

12 3

56 7 8

1, 2, 3

Source

4

Gate

5, 6, 7, 8 Drain

8

7

6

5

2 1

3

4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

100

V

Gate to source voltage

VGSS

+12, -5

V

Drain current

ID

4

A

Drain peak current

ID(pulse)

Note1

12

A

Body-drain diode reverse drain current

IDR

4

A

Avalanche current

IAP

Note 2

2

A

Avalanche energy

EAS

Note 2

0.4

mJ

Channel dissipation

Pch

Note3

10

W

Channel to case thermal impedance

ch-c Note3

12.5

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tch = 25

C, Rg  50 

3. Tc = 25

C

R07DS0195EJ0400

Rev.4.00

Apr 11, 2013

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