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RJK0656DPB Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0656DPB Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS1054EJ0200 Rev.2.00 Page 1 of 6 Apr 09, 2013 Preliminary Datasheet RJK0656DPB 60V, 40A, 5.6m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Low drive current Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) G D SSS 4 1 23 5 1, 2, 3 Source 4 Gate 5 Drain 1 2 3 4 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 20 V Drain current ID 40 A Drain peak current ID(pulse) Note1 160 A Body-drain diode reverse drain current IDR 40 A Avalanche current IAP Note 2 40 A Avalanche energy EAS Note 2 12 mJ Channel dissipation Pch Note3 65 W Channel to Case Thermal Resistance ch-C 1.92 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at L=10uH, Tch = 25 C, Rg 50 3. Tc = 25 C R07DS1054EJ0200 (Previous: REJ03G1882-0100) Rev.2.00 Apr 09, 2013 |
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