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RJK0652DPB-00-J5 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJK0652DPB-00-J5
Description  60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0652DPB-00-J5 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJK0652DPB
Preliminary
R07DS0077EJ0200 Rev.2.00
Page 4 of 6
Apr 09, 2013
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
20
16
12
8
4
–25
0
25
50
75
100 125 150
0
VGS = 4.5 V
10 V
Pulse Test
Channel Temperature Tch (
°C)
Maximum Avalanche Energy vs.
Channel Temperature Derating
25
20
15
10
5
25
50
75
100
125
150
0
IAP = 17.5 A
VDD = 20 V
duty < 0.1 %
Rg
≥ 50 Ω
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
030
20
10
50
40
10000
1000
100
10
VGS = 0
f = 1 MHz
Crss
Coss
Ciss
Gate Charge Qg (nC)
Dynamic Input Characteristics
100
80
60
40
20
0
20
16
12
8
4
20
40
60
80
100
0
0
Source to Drain Voltage VSD (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
20
10
0
0.4
0.8
1.2
1.6
2.0
Pulse Test
5 V
VGS = 0 V
10 V
ID = 35 A
VGS
VDS
VDD = 50 V
25 V
10 V
VDD = 50 V
25 V
10 V
Pulse Test
ID = 17.5 A


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