RJK0629JPE-00-J3 datasheet(2/7 Pages) RENESAS

Part #	RJK0629JPE-00-J3

Description	60 V - 85 A - Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 7 page

RJK0629JPE

Preliminary

R07DS1075EJ0100 Rev.1.00

Page 2 of 6

Jun 17, 2013

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Gate to source leak current

IGSS

—

±10

μA

VGS =

±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

μA

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

—

2.0

V

ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance

RDS(on)

—

3.75

4.5

m

Ω

ID = 43 A, VGS = 10 V

Note5

—

4.9

6.6

m

Ω

ID = 43 A, VGS = 4.5 V

Note5

Input capacitance

Ciss

—

4100

—

pF

VDS = 10 V, VGS = 0

f = 1 MHz

Output capacitance

Coss

—

1000

—

pF

Reverse transfer capacitance

Crss

—

780

—

pF

Total gate charge

Qg

—

85

—

nC

VDD = 25 V, VGS = 10 V,

ID = 85 A

Gate to source charge

Qgs

—

11

—

nC

Gate to drain charge

Qgd

—

25

—

nC

Turn-on delay time

td(on)

—

20

—

ns

ID= 43A, RL = 0.698

Ω,

VGS = 10 V, RG = 4.7

Ω

Rise time

tr

—

40

—

ns

Turn-off delay time

td(off)

—

100

—

ns

Fall time

tf

—

40

—

ns

Body-drain diode forward voltage

VDF

—

0.92

1.2

V

IF = 85 A, VGS = 0

Note5

Body-drain diode reverse recovery

time

trr

—

50

—

ns

IF = 85 A, VGS = 0,

diF/dt = 100 A/

μs

Note:

5. Pulse test

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