RJK0601DPN-E0-T2 datasheet(2/7 Pages) RENESAS

Part #	RJK0601DPN-E0-T2

Description	N-Channel MOS FET 60 V, 110 A, 3.1 m

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJK0601DPN-E0

Preliminary

R07DS0652EJ0200 Rev.2.00

Page 2 of 6

Aug 24, 2012

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown voltage

V(BR)DSS

60

—

V

ID = 10mA, VGS = 0

Gate to source leak current

IGSS

—

±0.1

A

VGS = 20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

A

VDS = 60 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

—

4.0

V

VDS = 10 V, ID = 1 mA

Static drain to source on state

resistance

RDS(on)

—

2.5

3.1

m



ID = 55 A, VGS = 10 V

Note4

Forward transfer admittance

|yfs|

—

120

—

S

ID = 55 A, VD = 10 V

Note4

Input capacitance

Ciss

—

10000

—

pF

Output capacitance

Coss

—

2150

—

pF

Reverse transfer capacitance

Crss

—

500

—

pF

VDS = 10 V

VGS = 0

f = 1 MHz

Gate Resistance

Rg

—

1.6

—



Total gate charge

Qg

—

141

—

nC

Gate to source charge

Qgs

—

50

—

nC

Gate to drain charge

Qgd

—

25

—

nC

VDD= 25 V

VGS = 10 V,

ID = 55 A

Turn-on delay time

td(on)

—

53

—

ns

Rise time

tr

—

27

—

ns

Turn-off delay time

td(off)

—

100

—

ns

Fall time

tf

—

29

—

ns

VGS = 10 V

ID = 55 A

VDD  30 V

Rg = 4.7



Body-drain diode forward voltage

VDF

—

0.85

1.5

V

IF = 110 A, VGS = 0

Note4

Body-drain diode reverse recovery time

trr

—

65

—

ns

IF = 110 A, VGS = 0

diF/dt = 100 A/s

Notes: 4. Pulse test

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