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2SC5619 Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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2SC5619 Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 4 page  2SC5619 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION DESCRIPTION 2SC5619 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency voltage application. FEATURE ・High gain bandwidth product. fT=4.5GHz ・High gain, low noise. ・Can operate at low voltage. ・Super mini package for easy mounting. APPLICATION For TV tuners, High frequency voltage amplifier, Cellular phone system OUTLINE DRAWING Unit：ｍｍ MAXIMUM RATINGS（Ta=25℃） Symbol Parameter Ratings Unit VCBO Collector to Base voltage 20 V VCEO Collector to Emitter voltage 12 V VEBO Emitter to Base voltage 3 V IC Collector current 50 mA PC Collector dissipation 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Parameter Test conditions Limits Unit Min Typ Max ICBO Collector cut off current VCB=10V, IE=0mA - - 0.5 μA IEBO Emitter cut off current VEB=1V, IC=0mA - - 1.0 μA hFE DC forward current gain VCE=5V , IC=20mA 50 - 250 - fT Gain bandwidth product VCE=5V, IE=20mA - 4.5 - GHz Cob Collector output capacitance VCB=5V, IE=0mA , f=1MHz - 1.0 - pF |S21|2 Insertion power gain VCE=5V, IC=20mA , f=1GHz 7.5 9.0 - dB NF Noise figure VCE=5V, IC=5mA , f=1GHz - 1.5 - dB MARKING G W TYPE NAME hFE ITEM 0.65 1.5 0.65 2.8 ① ② ③ JEITA：SC-59 JEDEC：Similar to TO-236 TERMINAL CONNECTOR ①：BASE ②：EMITTER ③：COLLECTOR |
Similar Part No. - 2SC5619_13 |
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Similar Description - 2SC5619_13 |
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