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SIHB24N65E-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHB24N65E-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page SiHB24N65E www.vishay.com Vishay Siliconix S12-3104-Rev. F, 24-Dec-12 2 Document Number: 91477 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.5 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 650 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 250 μA -0.72 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 650 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 10 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 12 A - 0.120 0.145 Forward Transconductance gfs VDS = 8 V, ID = 5 A - 7.1 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 2740 - pF Output Capacitance Coss - 122 - Reverse Transfer Capacitance Crss -4 - Effective Output Capacitance, Energy Relateda Co(er) VDS = 0 V to 520 V, VGS = 0 V -93 - Effective Output Capacitance, Time Relatedb Co(tr) - 352 - Total Gate Charge Qg VGS = 10 V ID = 12 A, VDS = 520 V - 81 122 nC Gate-Source Charge Qgs -21 - Gate-Drain Charge Qgd -37 - Turn-On Delay Time td(on) VDD = 520 V, ID = 12 A, VGS = 10 V, Rg = 9.1 -24 48 ns Rise Time tr - 84 126 Turn-Off Delay Time td(off) - 70 105 Fall Time tf - 69 104 Gate Input Resistance Rg f = 1 MHz, open drain - 0.68 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 24 A Pulsed Diode Forward Current ISM -- 70 Diode Forward Voltage VSD TJ = 25 °C, IS = 12 A, VGS = 0 V - - 1.2 V Reverse Recovery Time trr TJ = 25 °C, IF = IS = 12 A, dI/dt = 100 A/μs, VR = 25 V - 433 - ns Reverse Recovery Charge Qrr -7.3 - μC Reverse Recovery Current IRRM -28 - A S D G |
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