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SIHB24N65E-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHB24N65E-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page SiHB24N65E www.vishay.com Vishay Siliconix S12-3104-Rev. F, 24-Dec-12 1 Document Number: 91477 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 E Series Power MOSFET FEATURES • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses • Ultra Low Gate Charge (Qg) • Avalanche Energy Rated (UIS) • Material categorization: For definitions please see www.vishay.com/doc?99912 APPLICATIONS • Server and Telecom Power Supplies • Switch Mode Power Supplies (SMPS) • Power Factor Correction Power Supplies (PFC) •Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. PRODUCT SUMMARY VDS (V) at TJ max. 700 RDS(on) max. at 25 °C ()VGS = 10 V 0.145 Qg max. (nC) 122 Qgs (nC) 21 Qgd (nC) 37 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB24N65E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ± 20 Gate-Source Voltage AC (f > 1 Hz) 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C ID 24 A TC = 100 °C 16 Pulsed Drain Currenta IDM 70 Linear Derating Factor 2W/°C Single Pulse Avalanche Energyb EAS 508 mJ Maximum Power Dissipation PD 250 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Drain-Source Voltage Slope TJ = 125 °C dV/dt 37 V/ns Reverse Diode dV/dtd 11 Soldering Recommendations (Peak Temperature) for 10 s 300c °C |
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