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RJK0451DPB-00-J5 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK0451DPB-00-J5
Description  40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0451DPB-00-J5 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK0451DPB
Preliminary
R07DS0073EJ0200 Rev.2.00
Page 3 of 6
Apr 09, 2013
Main Characteristics
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
10
0.1
1
1
10
100
1000
250
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
100
VGS = 4.5 V
10 V
Pulse Test
5 A
Case Temperature Tc (°C)
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse
10
μs
VGS = 2.6 V
Pulse Test
2.8 V
3.0 V
10 V
3.2 V
4.5 V


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