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RJK03R4DPA Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # RJK03R4DPA
Description  Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
Download  11 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK03R4DPA Datasheet(HTML) 7 Page - Renesas Technology Corp

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RJK03R4DPA
Preliminary
R07DS0888EJ0110 Rev.1.10
Page 7 of 10
Oct 29, 2012
• MOS2
0.1
110
100
10
100
1000
1
0.1
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by RDS(on)
1 ms
DC
Operation
Static Drain to Source On State Resistance
vs. Drain Current
50
40
30
20
10
0
24
6
8
10
50
40
30
20
10
0
12
3
4
5
1
0.3
0.1
30
300
1
10
100
1000
3
10
3
8 V
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Power vs. Temperature Derating
VDS = 5 V
Pulse Test
Tc = 75°C
25°C
–25°C
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VGS = 2.5 V
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Pulse Test
VGS = 4.5 V
2.7 V
10 V
4.5 V
2.6 V
2.8 V
10
ms
Pulse Test
80
60
40
20
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
5 A


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