Electronic Components Datasheet Search |
|
RJK03R4DPA Datasheet(PDF) 7 Page - Renesas Technology Corp |
|
RJK03R4DPA Datasheet(HTML) 7 Page - Renesas Technology Corp |
7 / 11 page RJK03R4DPA Preliminary R07DS0888EJ0110 Rev.1.10 Page 7 of 10 Oct 29, 2012 • MOS2 0.1 110 100 10 100 1000 1 0.1 Drain to Source Voltage VDS (V) Maximum Safe Operation Area Tc = 25 °C 1 shot Pulse Operation in this area is limited by RDS(on) 1 ms DC Operation Static Drain to Source On State Resistance vs. Drain Current 50 40 30 20 10 0 24 6 8 10 50 40 30 20 10 0 12 3 4 5 1 0.3 0.1 30 300 1 10 100 1000 3 10 3 8 V 40 30 20 10 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating VDS = 5 V Pulse Test Tc = 75°C 25°C –25°C Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics VGS = 2.5 V Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Pulse Test VGS = 4.5 V 2.7 V 10 V 4.5 V 2.6 V 2.8 V 10 ms Pulse Test 80 60 40 20 0 4 8 12 16 20 Pulse Test ID = 20 A 10 A 5 A |
Similar Part No. - RJK03R4DPA |
|
Similar Description - RJK03R4DPA |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |