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RJK03P9DPA Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # RJK03P9DPA
Description  Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK03P9DPA Datasheet(HTML) 9 Page - Renesas Technology Corp

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RJK03P9DPA
Preliminary
R07DS0907EJ0110 Rev.1.10
Page 9 of 10
Nov 01, 2012
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
Vin
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAS =
L
• I
AP
2
•
2
1
VDSS
VDSS – VDD
Vin Monitor
D.U.T.
Vin
RL
VDS
= 10 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
90%
10%
tf
Rg
3
1
0.3
0.1
0.03
0.01
1 m
10 m
100 m
1
10
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Avalanche Test Circuit
Avalanche Waveform
Switching Time Test Circuit
Switching Time Waveform
DM
P
PW
T
D =
PW
T


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