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P1AFS1500-PQ484I Datasheet(PDF) 72 Page - Microsemi Corporation |
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P1AFS1500-PQ484I Datasheet(HTML) 72 Page - Microsemi Corporation |
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72 / 334 page  Device Architecture 2-56 Revision 4 FlashROM Fusion devices have 1 kbit of on-chip nonvolatile flash memory that can be read from the FPGA core fabric. The FlashROM is arranged in eight banks of 128 bits during programming. The 128 bits in each bank are addressable as 16 bytes during the read-back of the FlashROM from the FPGA core (Figure 2- 45). The FlashROM can only be programmed via the IEEE 1532 JTAG port. It cannot be programmed directly from the FPGA core. When programming, each of the eight 128-bit banks can be selectively reprogrammed. The FlashROM can only be reprogrammed on a bank boundary. Programming involves an automatic, on-chip bank erase prior to reprogramming the bank. The FlashROM supports a synchronous read and can be read on byte boundaries. The upper three bits of the FlashROM address from the FPGA core define the bank that is being accessed. The lower four bits of the FlashROM address from the FPGA core define which of the 16 bytes in the bank is being accessed. The maximum FlashROM access clock is given in Table 2-26 on page 2-57. Figure 2-46 shows the timing behavior of the FlashROM access cycle—the address has to be set up on the rising edge of the clock for DOUT to be valid on the next falling edge of the clock. If the address is unchanged for two cycles: • D0 becomes invalid tCK2Q ns after the second rising edge of the clock. • D0 becomes valid again tCK2Q ns after the second falling edge. If the address unchanged for three cycles: • D0 becomes invalid tCK2Q ns after the second rising edge of the clock. • D0 becomes valid again tCK2Q ns after the second falling edge. • D0 becomes invalid tCK2Q ns after the third rising edge of the clock. • D0 becomes valid again tCK2Q ns after the third falling edge. Figure 2-45 • FlashROM Architecture Byte Number in Bank 4 LSB of ADDR (READ) 7 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
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