RJK03P0DPA-00-J5A datasheet(3/11 Pages) RENESAS

Part #	RJK03P0DPA-00-J5A

Description	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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3 / 11 page

RJK03P0DPA

Preliminary

R07DS0904EJ0120 Rev.1.20

Page 3 of 10

Nov 01, 2012

• MOS2

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

30

—

V

ID = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

±0.5

A

VGS = ±20 V, VDS = 0

Zero gate voltage drain current

IDSS

—

1

mA

VDS = 24 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.2

—

2.5

V

VDS = 10 V, I D =1 mA

RDS(on)

—

6.0

7.2

m



ID =12.5 A, VGS = 10 V

Note4

Static drain to source on state

resistance

RDS(on)

—

7.2

9.4

m



ID = 12.5 A, VGS = 4.5 V

Note4

Forward transfer admittance

|yfs|

—

55

—

S

ID = 12.5 A, VDS = 5 V

Note4

Input capacitance

Ciss

—

1900

2660

pF

Output capacitance

Coss

—

360

—

pF

Reverse transfer capacitance

Crss

—

230

—

pF

VDS = 10 V

VGS = 0

f = 1MHz

Gate Resistance

Rg

—

1.6

3.2



Total gate charge

Qg

—

12.3

—

nC

Gate to source charge

Qgs

—

4.0

—

nC

Gate to drain charge

Qgd

—

3.7

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 25 A

Turn-on delay time

td(on)

—

5.2

—

ns

Rise time

tr

—

3.6

—

ns

Turn-off delay time

td(off)

—

35

—

ns

Fall time

tf

—

12.3

—

ns

VGS = 10 V, ID = 12.5 A

VDD  10 V

RL = 0.8 

Rg = 4.7 

Schottky Barrier diode forward voltage

VF

—

0.44

—

V

IF = 2 A, VGS = 0

Note4

Body–drain diode reverse

recovery time

trr

—

6.6

—

ns

IF = 25 A, VGS = 0

diF/ dt = 100 A/s

Notes: 4. Pulse

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