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RJK03N2DPA Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJK03N2DPA
Description  30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK03N2DPA Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJK03N2DPA
Preliminary
R07DS0783EJ0200 Rev.2.00
Page 3 of 6
Feb 12, 2013
Main Characteristics
50
40
30
20
10
0
24
6
8
10
50
40
30
20
10
01
2
3
4
5
10
3
1
30
300
1
10
100
1000
3
200
150
100
50
0
36
9
12
10 A
100
30
8 V
2.3 V
8 V
4.5 V
5A
40
30
20
10
0
50
100
150
200
2.4 V
Case Temperature Tc (°C)
Power vs. Temperature Derating
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
VDS = 5 V
Pulse Test
Tc = 75°C
25°C
–25°C
Pulse Test
VGS = 2.2 V
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source On State Resistance
vs. Drain Current
Pulse Test
Pulse Test
VGS = 4.5 V
ID = 20 A
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by RDS(on)
2.5 V


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