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MRF847 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF847
Description  RF POWER TRANSISTOR NPN SILICON
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MRF847 Datasheet(HTML) 1 Page - Motorola, Inc

   
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1
MRF847
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806 – 960 MHz.
• Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 45 Watts
Power Gain = 4.5 dB Min
Efficiency = 60% Min
• Series Equivalent Large–Signal Characterization
• Internally Matched Input for Broadband Operation
• Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @
High Line and Rated Drive
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16.5
Vdc
Collector–Base Voltage
VCBO
38
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
12
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
150
0.85
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.17
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
16.5
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
38
Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
ICES
10
mAdc
(continued)
Order this document
by MRF847/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF847
45 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
© Motorola, Inc. 1994


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