40W Power Packaged Transistor

CHK040A-SOA

Ref. : DSCHK040ASOA3021 - 21 Jan 13

3/14

Specifications subject to change without notice

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Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

RF Characteristics (Pulsed)

Tcase= +25°C, Pulse mode

Symbol

Parameter

Min

Typ

Max

Unit

Small Signal Gain

16

18

dB

Saturated Output Power

45

55

W

PAE

Max Power Added Efficiency

55

60

%

Associated Gain at Max PAE

13

dB

offset between DC and RF pulse.

These values are the intrinsic performance of the packaged device. They are deduced from

measurements and simulations. They are considered in the reference plane defined by the

leads of the package, at the connection interface with the PCB.

The typical performance achievable in more than 25% frequency band around 3GHz was

demonstrated using the reference board 61499547 presented hereafter.

Absolute Maximum Ratings

Tcase= +25°C

(1), (2), (3)

Symbol

Parameter

Rating

Unit

Note

Drain-Source Voltage

60

V

Gate-Source Voltage

-10, +2

V

(6)

Maximum Gate Current in forward mode

72

mA

Maximum Gate Current in reverse mode

-12

mA

Maximum Drain Current

6

A

(4)

Maximum Input Power (typical)

39

dBm

(5)

Junction Temperature

220

°C

Storage Temperature

-55 to +150

°C

Case Operating Temperature

See note

°C

(4)

damage.

parameter, since each parameter is independent from each other, otherwise deterioration or

destruction of the device may take place.