CHA8100

X-band High Power Amplifier

Ref : DSCHA81000069 - 10 Mar 10

10/12

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Bonding recommendations

For thermal and electrical considerations, the chip should be brazed on a metal base plate.

The RF, DC and modulation port inter-connections should be done according to the following

table:

Port

Connection

IN (1)

Inductance (Lbonding) = 0.3nH

400µm length with wire diameter of 25 µm x2

OUT (12)

Inductance (Lbonding) = 0.3nH

400µm length with wire diameter of 25 µm x2

DC pads to 1

double bonding

Inductance (Lbonding) =0.7nH

Two 1.2mm length wires with a diameter of 25 µm

DC pads to 1

single bonding

Inductance (Lbonding) =1nH

One 1.2mm length wires with a diameter of 25 µm

1

level for double bonding

Inductance (Lbonding) =0.7nH

Two 1.2mm length wires with a diameter of 25 µm

1

level for single bonding

Inductance (Lbonding) =1nH

One 1.2mm length wires with a diameter of 25 µm

Assembly recommendations in test fixture

(using analogue biasing circuits)

22

21

20

19

17

16

15

14

18

13

2

3

4

5

7

8

9

10

6

11

12

1

IN

OUT

Vc

Vctrl

100pF

10nF

1µF

100µF

Vc

Vctrl

22

21

20

19

17

16

15

14

18

13

2

3

4

5

7

8

9

10

6

11

12

1

IN

OUT

Vc

Vctrl

100pF

10nF

1µF

100µF

Vc

Vctrl

22

21

20

19

17

16

15

14

18

13

2

3

4

5

7

8

9

10

6

11

12

1

IN

OUT

Vc

Vctrl

100pF

10nF

1µF

100µF

100pF

10nF

1µF

100µF

Vc

Vctrl

Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be

preferred.