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CHA8100-99F00 Datasheet(PDF) 10 Page - United Monolithic Semiconductors |
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CHA8100-99F00 Datasheet(HTML) 10 Page - United Monolithic Semiconductors |
10 / 12 page CHA8100 X-band High Power Amplifier Ref : DSCHA81000069 - 10 Mar 10 10/12 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Bonding recommendations For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table: Port Connection IN (1) Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm x2 OUT (12) Inductance (Lbonding) = 0.3nH 400µm length with wire diameter of 25 µm x2 DC pads to 1 st decoupling level for double bonding Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 µm DC pads to 1 st decoupling level for single bonding Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 µm 1 st decoupling level to 2nd decoupling level for double bonding Inductance (Lbonding) =0.7nH Two 1.2mm length wires with a diameter of 25 µm 1 st decoupling level to 2nd decoupling level for single bonding Inductance (Lbonding) =1nH One 1.2mm length wires with a diameter of 25 µm Assembly recommendations in test fixture (using analogue biasing circuits) 22 21 20 19 17 16 15 14 18 13 2 3 4 5 7 8 9 10 6 11 12 1 IN OUT Vc Vctrl 100pF 10nF 1µF 100µF Vc Vctrl 22 21 20 19 17 16 15 14 18 13 2 3 4 5 7 8 9 10 6 11 12 1 IN OUT Vc Vctrl 100pF 10nF 1µF 100µF Vc Vctrl 22 21 20 19 17 16 15 14 18 13 2 3 4 5 7 8 9 10 6 11 12 1 IN OUT Vc Vctrl 100pF 10nF 1µF 100µF 100pF 10nF 1µF 100µF Vc Vctrl Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be preferred. |
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