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RJP1CS08DWT-80X0 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJP1CS08DWT-80X0
Description  1250V - 200A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP1CS08DWT-80X0 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0831EJ0100 Rev.1.00
Page 1 of 3
Jan 23, 2013
Preliminary Datasheet
RJP1CS08DWT/RJP1CS08DWA
1250V - 200A - IGBT
Application: Inverter
Features
 Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Ta = 25C)
 High speed switching
 Short circuit withstands time (10 s min.)
Outline
1. Gate
2. Collector (The back)
3. Emitter
Die: RJP1CS08DWT-80
Wafer: RJP1CS08DWA-80
2
C
2
1 G
E
3
1
3
3
3
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
VCES
1250
V
Gate to emitter voltage
VGES
±30
V
Tc = 25°C
IC
400
A
Collector current
Tc = 100°C
IC
200
A
Junction temperature
Tj
150
C
R07DS0831EJ0100
Rev.1.00
Jan 23, 2013


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