RQJ0303PGDQA_11 datasheet(3/7 Pages) RENESAS

Part #	RQJ0303PGDQA

Description	Silicon P Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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3 / 7 page

RQJ0303PGDQA

Preliminary

R07DS0295EJ0500 Rev.5.00

Page 3 of 6

Mar 28, 2011

Main Characteristics

0

0.4

0.2

0.6

1.0

0.8

1.2

0

25

50

75

100

125

150

–

2.4 V

–2.3 V

–

2.2 V

–

2.1 V

–

1.9 V

VGS = 0 V

–1.0

–5

–0.8

–4

–0.6

–3

–0.4

–2

–0.2

–1

0

–

3 V

0

–0.2

–0.4

–0.6

–0.8

–1.0

0

–0.5

–1

–1.5

–2

–2.5

–0.0001

–0.001

–0.01

–0.1

–1

–1.5

0

–0.5

–2

–2.5

–3

–1.0

–1.5

–0.5

–2.0

0

–25

0

25

50

75

100 125

150

Pulse Test

Tc = 25

°C

VDS = –10 V

Pulse Test

–

2.5 V

–25

°C

Tc = 75

°C

VDS = –10 V

Pulse Test

ID = –10 mA

–1 mA

–0.1 mA

–

2 V

Tc = 75

°C

25

°C

–25

°C

VDS = –10 V

Pulse Test

25

°C

–

4 to

–10 V

Ambient Temperature Ta (

°C)

*When using the glass epoxy board (FR-4: 40

× 40 × 1 mm)

Maximum Channel Power

Dissipation Curve

Maximum Safe Operation Area

Drain to Source Voltage VDS (V)

Typical Output Characteristics

Drain to Source Voltage VDS (V)

Typical Transfer Characteristics (1)

Gate to Source Voltage VGS (V)

Typical Transfer Characteristics (2)

Gate to Source Voltage VGS (V)

Gate to Source Cutoff Voltage vs.

Case Temperature

Case Temperature Tc (

°C)

–0.01

–0.1

–1

–10

–0.1

–1

–10

–100

–0.01

–100

Tc = 25

°C

1 ms

100

μs

Operation in this area

is limited by RDS(on)

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