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RQJ0304DQDQA Datasheet(PDF) 5 Page - Renesas Technology Corp |
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RQJ0304DQDQA Datasheet(HTML) 5 Page - Renesas Technology Corp |
5 / 8 page RQJ0304DQDQA Preliminary R07DS0296EJ0200 Rev.2.00 Page 5 of 7 Mar 28, 2011 Dynamic Input Characteristics Gate Charge Qg (nC) Switching Characteristics Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Input Capacitance vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Source to Drain Voltage VSD (V) Body-Drain Diode Forward Voltage vs. Case Temperature Case Temperature Tc (°C) 1 10 100 1000 –0 –5 –10 –15 –20 –30 –25 –0.2 –0.3 –0.4 –0.5 –0.6 –25 0 25 50 75 100 125 150 0 –0.4 –0.8 –1.2 –1.6 –4 –2 –6 –8 Crss Coss VGS = 0 V f = 1 MHz Ciss 260 280 300 320 340 360 –10 –8 –6 –4 –2 024 68 10 240 0 –10 –1 mA ID = –10 mA VGS = 0 VGS = 0, 2.5, 4.5, 10 V Pulse Test Tc = 25 °C –2.5 V –4.5 V –10 V VDS = 0 f = 1MHz 0 –4 –6 2 13 4 5 –8 –2 0 –20 –30 –40 –10 0 ID = –2.0 A Tc = 25 °C VDD = –10 V –25 V VDD = –10 V –25 V 1000 100 10 1 –0.01 –0.1 –1 –10 VGS = –4.5 V, VDD = –10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25 °C tr tf td(off) td(on) |
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