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RQK0203SGDQA Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RQK0203SGDQA Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RQK0203SGDQA Preliminary R07DS0303EJ0400 Rev.4.00 Page 3 of 6 Mar 28, 2011 Main Characteristics 10 8 6 4 2 0 0 2 4 8 6 0.0001 0.001 0.01 1 0.1 0 0.5 1 1.5 2 2.5 3 0 0.2 0.4 0.6 0.8 1 0 50 100 150 0 2 4 6 8 01 23 4 5 0 1 0.5 1.5 –25 0 25 50 75 100 125 150 VDS = 10 V Pulse Test VDS = 10 V Pulse Test Tc = 75 °C 25 °C –25 °C 10 V 3 V 5 V 0.01 0.1 1 10 100 0.01 0.1 1 10 100 0.1 mA Ta = 25 °C 1 Shot Pulse 100 μs PW = 100 ms 1 ms 10 ms DC Operation Tc = 75 °C –25 °C 25 °C VDS = 10 V Pulse Test Pulse Test Tc = 25 °C 1.6 V 1.8 V 2.0 V 2.2 V 2.4 V 2.8 V 2.6 V 1.4 V VGS = 0 V ID = 10 mA 1 mA Ambient Temperature Ta ( °C) Maximum Channel Power Dissipation Curve Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Drain to Source Voltage VDS (V) Typical Transfer Characteristics (1) Gate to Source Voltage VGS (V) Typical Transfer Characteristics (2) Gate to Source Voltage VGS (V) Gate to Source Cutoff Voltage vs. Case Temperature Case Temperature Tc ( °C) *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) Operation in this area is limited by RDS(on) |
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