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RQK2001HQDQATL-H Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RQK2001HQDQATL-H
Description  Silicon N Channel MOS FET Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RQK2001HQDQATL-H Datasheet(HTML) 3 Page - Renesas Technology Corp

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RQK2001HQDQA
Preliminary
R07DS0311EJ0200 Rev.2.00
Page 3 of 7
Mar 28, 2011
Main Characteristics
0.01
0.1
1
10
1
10
100
1000
0.001
Ta = 25
°C
1 Shot Pulse
100
μs
100
ms
10
ms
DC
Operation
1 ms
Ambient Temperature Ta (
°C)
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics (2)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (
°C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
0
0.4
0.2
0.6
1.0
0.8
0
25
50
75
100
125
150
Operation in this area
is limited by R
DS(on)
20
8
16
412
0
0
0.4
0.2
0.6
1.0
0.8
1.2
1.4
1.6
V
GS = 0V
Pulse Test
Tc = 25
°C
6 V
7 V
5 V
9, 10, 15 V
20, 25 V
8 V
0
0.2
0.4
0.6
0.8
1.0
02
4
6
8
10
Tc = 75
°C
–25
°C
VDS = 10 V
Pulse Test
25
°C
0.00001
0.0001
0.001
0.01
0.1
01
2
3
4
5
6
VDS = 10 V
Pulse Test
Tc = 75
°C
25
°C
–25
°C
0
2
4
6
–25
0
25
50
75
100 125 150
VDS = 10 V
Pulse Test
ID = 10 mA
1 mA
0.1 mA


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