5 - 18 GHz High Power Amplifier

CHA6518

Ref. DSCHA65185007 - 7 Jan 05

7/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Assembly recommendations

C1

C1

C1

C1

C1

C1 C1

C1

C1

C2

C2

C2

C2

Lbonding

Lbonding

Vg

Vd

For thermal and electrical considerations, the chip should be brazed on a metal base plate.

The RF, DC and modulation port inter-connections should be done according to the following

table:

Port

Connection

External capacitor

IN (17)

Inductance (Lbonding) = 0.3nH

OUT (9)

Inductance (Lbonding) = 0.3nH

VD (2, 5, 8, 10, 13)

Inductance

≤ 1nH

C1 ~ 100pF

C2 ~ 100nF

VG (3, 6, 12, 15)

Inductance

≤ 1nH

C1 ~ 100pF

C2 ~ 100nF