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CHA6518-99F00 Datasheet(PDF) 7 Page - United Monolithic Semiconductors |
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CHA6518-99F00 Datasheet(HTML) 7 Page - United Monolithic Semiconductors |
7 / 8 page 5 - 18 GHz High Power Amplifier CHA6518 Ref. DSCHA65185007 - 7 Jan 05 7/8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Assembly recommendations C1 C1 C1 C1 C1 C1 C1 C1 C1 C2 C2 C2 C2 Lbonding Lbonding Vg Vd For thermal and electrical considerations, the chip should be brazed on a metal base plate. The RF, DC and modulation port inter-connections should be done according to the following table: Port Connection External capacitor IN (17) Inductance (Lbonding) = 0.3nH OUT (9) Inductance (Lbonding) = 0.3nH VD (2, 5, 8, 10, 13) Inductance ≤ 1nH C1 ~ 100pF C2 ~ 100nF VG (3, 6, 12, 15) Inductance ≤ 1nH C1 ~ 100pF C2 ~ 100nF |
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