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S-4-NIL-6V Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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S-4-NIL-6V Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 5 page 219 S-RELAYS 4 AMP POLARIZED HIGH DENSITY RELAY WITH HIGH SENSITIVITY mm inch 28.0 1.102 12.0 .472 10.4 .409 FEATURES • A variety of contact arrangements 2 Form A 2 Form B, 3 Form A 1 Form B, 4 Form A • Latching types available • High sensitivity in small size 100 mW pick-up and 200 mW nominal operat- ing power • High shock and vibration resistance Shock: 50 G Vibration: 10 to 55 Hz at double amplitude of 3 mm • Wide switching range From 100 µA 100 mV DC to 4 A 250 V AC • Low thermal electromotive force Ap- prox. 3 µV • Dual-In-Line packaging arrangement SPECIFICATIONS Contacts Coil (polarized) (at 20 °C 68°F) Characteristics (at 25 °C 77°F 50% Relative humidity) Arrangement 2 Form A 2 Form B, 3 Form A 1 Form B, 4 Form A Initial contact resistance, max. (By voltage drop 6 V DC 1 A) 50 m Ω Initial contact pressure Approx. 12 g .42 oz Initial contact bounce, max. 1 ms Contact material Gold clad silver alloy Electrostatic capacitance Approx. 3pF Thermal electromotive force (at nominal coil voltage) Approx. 3 µV Rating (resistive) Nominal switching capacity 4 A 250 V AC, 3 A 30 V DC Maximum switching power 1,000 VA, 90 W Maximum switching voltage 250 V AC, 30 V DC (48 VDC at less than 0.5 A) Max. switching current 4 A (AC), 3 A (DC) Min. switching capacity**1 100 µA 100 m V DC Expected life (min. operations) Mechanical (at 50 cps) 108 Electrical (at 20 cpm) 4 A 250 V AC 105 3 A 30 V DC 2 × 105 Single side stable Minimum operating power Approx. 100 mW Nominal operating power Approx. 200 mW Latching Minimum set and reset Approx. 100 mW Nominal set and reset Approx. 200 mW Max. operating speed 20 cpm for maximum load, 50 cps for low-level load (1 mA 1 V DC) Initial insulation resistance*1 10,000 M Ω at 500 V DC Initial breakdown voltage*2 Between open contacts 750 Vrms Between contact sets 1,000 Vrms Between contacts and coil 1,500 Vrms Operate time*3 (at nominal voltage)(at 20 °C) Max. 15 ms (Approx. 8 ms) Release time (without diode)*3 (at nominal voltage)(at 20 °C) Max. 10 ms (Approx. 5 ms) Set time*3 (latching) (at nominal voltage)(at 20 °C) Max. 15 ms (Approx. 8 ms) Reset time*3 (latching) (at nominal voltage)(at 20 °C) Max. 15 ms (Approx. 8 ms) Initial contact bounce, max. 1 ms Temperature rise (at nominal voltage)(at 20 °C) Max. 35 °C with nominal coil voltage and at maximum switching current Shock resistance Functional*4 Min. 490 m/s2 {50 G} Destructive*5 Min. 980 m/s2 {100 G} Vibration resistance Functional*6 176.4 m/s2 {18 G}, 10 to 55 Hz at double amplitude of 3 mm Destructive 235.2 m/s2 {24 G}, 10 to 55 Hz at double amplitude of 4 mm Conditions for operation, transport and storage*7 (Not freezing and condens- ing at low temperature) Ambient temp. –40 °C to +65°C –40 °F to +149°F Humidity 5 to 85% R.H. Unit weight Approx. 8 g .28 oz Notes: **1 This value can change due to the switching frequency, environmental conditions, and desired reliability level, therefore it is recommended to check this with the actual load. Remarks * Specifications will vary with foreign standards certification ratings. *1 Measurement at same location as "Initial breakdown voltage "section *2 Detection current: 10mA *3 Excluding contact bounce time *4 Half-wave pulse of sine wave: 11ms; detection time: 10 µs *5 Half-wave pulse of sine wave: 6ms *6 Detection time: 10 µs *7 Refer to 5. Conditions for operation, transport and storage mentioned in AMBIENT ENVIRONMENT (Page 61). TYPICAL APPLICATIONS Telecommunications equipment, data processing equipment, facsimiles, alarm equipment, measuring equipment. |
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