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ISL9N7030BLP3 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. ISL9N7030BLP3
Description  30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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ISL9N7030BLP3 Datasheet(HTML) 2 Page - Fairchild Semiconductor

 
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©2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V (Figure 10)
30
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 25V, VGS = 0V
-
-
1
µA
VDS = 25V, VGS = 0V, TC = 150
oC
-
-
250
µA
Gate to Source Leakage Current
IGSS
VGS = ±20V
-
-
±100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA (Figure 9
1
-
3
V
Drain to Source On Resistance
rDS(ON)
ID = 75A, VGS = 10V (Figures 7, 8)
-
0.007
0.009
ID = 48A, VGS = 4.5V (Figure 7)
-
0.010
0.012
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time
tON
VDD = 15V, ID = 15A
VGS = 4.5V, RGS = 6.2Ω
(Figures 13, 17, 18)
-
-
122
ns
Turn-On Delay Time
td(ON)
-15-
ns
Rise Time
tr
-67-
ns
Turn-Off Delay Time
td(OFF)
-35-
ns
Fall Time
tf
-32-
ns
Turn-Off Time
tOFF
-
-
100
ns
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time
tON
VDD = 15V, ID = 15A,
VGS = 10V, RGS = 6.2Ω,
(Figures 14, 17, 18)
-
-
71
ns
Turn-On Delay Time
td(ON)
-8
-
ns
Rise Time
tr
-40-
ns
Turn-Off Delay Time
td(OFF)
-64-
ns
Fall Time
tf
-31-
ns
Turn-Off Time
tOFF
-
-
142
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge at 10V
Qg(TOT)
VGS = 0V to 10V
VDD = 15V,
ID = 48A,
Ig(REF) = 1.0mA
(Figures 12, 15, 16)
-45
68
nC
Total Gate Charge at 5V
Qg(5)
VGS = 0V to 5V
-
24
37
nC
Threshold Gate Charge
Qg(TH)
VGS = 0V to 1V
-
2.6
4.0
nC
Gate to Source Gate Charge
Qgs
-7
-
nC
Gate to Drain “Miller” Charge
Qgd
-8
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 15V, VGS = 0V,
f = 1MHz
(Figure 11)
-
2600
-
pF
Output Capacitance
COSS
-
520
-
pF
Reverse Transfer Capacitance
CRSS
-
225
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 48A
-
-
1.25
V
ISD = 20A
-
-
1.0
V
Reverse Recovery Time
trr
ISD = 48A, dISD/dt = 100A/µs-
-
26
ns
Reverse Recovered Charge
QRR
ISD = 48A, dISD/dt = 100A/µs-
-
14
nC
ISL9N7030BLP3, ISL9N7030BLS3ST


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