Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

ISL9N7030BLP3 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. ISL9N7030BLP3
Description  30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET Trench Power MOSFETs
Download  10 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

ISL9N7030BLP3 Datasheet(HTML) 1 Page - Fairchild Semiconductor

 
Zoom Inzoom in Zoom Outzoom out
 1 / 10 page
background image
©2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
ISL9N7030BLP3, ISL9N7030BLS3ST
30V, 0.009 Ohm, 75A, N-Channel Logic
Level UltraFET® Trench Power MOSFETs
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Packaging
Features
•Fast Switching
•rDS(ON) = 0.0064Ω (Typ), VGS = 10V
•rDS(ON) = 0.010Ω (Typ), VGS = 4.5V
•Qg Total 24nC (Typ), VGS = 5V
•Qgd (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11nC
•CISS (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2600pF
Symbol
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive products.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
ISL9N7030BLS3ST
JEDEC TO-263AB
ISL9N7030BLP3
JEDEC TO-220AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N7030BLP3
TO-220AB
7030BL
ISL9N7030BLS3ST
TO-263AB (Tape and Reel)
7030BL
PWM
Optimized
D
G
S
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N7030BLP3, ISL9N7030BLS3ST
UNITS
VDSS
Drain to Source Voltage (Note 1)
30
V
VDGR
Drain to Gate Voltage (RGS = 20kΩ) (Note 1)
30
V
VGS
Gate to Source Voltage
±20
V
ID
ID
ID
IDM
Drain Current
Continuous (TC = 25
oC, V
GS = 10V) (Figure 2)
Continuous (TC = 100
oC, V
GS = 4.5V) (Figure 2)
Continuous (TC = 25
oC, V
GS = 10V, R
θJA = 43
oC/W)
Pulsed Drain Current
75
48
15
Figure 4
A
A
A
A
PD
Power Dissipation
Derate Above 25oC
100
0.67
W
W/oC
TJ, TSTG Operating and Storage Temperature
-55 to 175
oC
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
oC
oC
THERMAL SPECIFICATIONS
RθJC
Thermal Resistance Junction to Case, TO-220, TO-263
1.5
oC/W
RθJA
Thermal Resistance Junction to Ambient, TO-220, TO-263
62
oC/W
RθJA
Thermal Resistance Junction to Ambient, TO-263, 1in2 copper pad area
43
oC/W
NOTE:
1. TJ = 25
oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
January2002


Html Pages

1  2  3  4  5  6  7  8  9  10 


Datasheet Download




Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn