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FDB102S Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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FDB102S Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page FDB101S ~ FDB107S Voltage 50V ~ 1000V 1.0 Amp Silicon Bridge Rectifiers Elektronische Bauelemente 06-Mar-2012 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Rating to 1000V PRV Surge overload rating to 30 Amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product Lead solderable per MIL-STD-202 method 208 Lead: silver plated copper, soldered plated Plastic material has UL flammability classification 94V-0 MECHANICAL DATA Polarity: As marked on Body Weight:0.016 ounces, 0.45 grams Mounting position: Any PACKAGE INFORMATION Package MPQ Leader Size DB-1SA 1.5K 13 inch MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Symbol Part Number Unit FDB 101S FDB 102S FDB 103S FDB 104S FDB 105S FDB 106S FDB 107S Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Output Current @TA=25°C IF (AV) 1.0 A Peak Forward Surge Current 8.3 ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A Maximum Forward Voltage @ 1.0 A DC VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage TA=25°C IR 10 µ A TA=100°C 1 mA Maximum Reverse Recovery Time 1 TRR 150 250 500 ns Operating and Storage temperature range TJ, TSTG -55~125, -55~150 °C Notes: 1. Measured with IF=0.5A, IR=1A, IRR=0.25A DB-1SA REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 8.20 8.40 H 0.90 1.50 B 8.00 8.60 J 0.90 1.10 D 6.10 6.50 E 2.35 2.65 F 4.80 5.20 G 9.40 10.6 |
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