D217V853S datasheet(3/10 Pages) FAIRCHILD

Part #	D217V853S

Description	Dual Channel Phototransistor

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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MOCD217M Rev. 1.0.5

3

Electrical Characteristics

TA = 25°C unless otherwise speciﬁed.

*Typical values at TA = 25°C

Notes:

1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating.

2. For this test, pins 1, 2, 3 and 4 are common and pins 5, 6, 7 and 8 are common.

3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second.

4. Current Transfer Ratio (CTR) = IC / IF x 100%.

Symbol

Parameter

Test Conditions

Min.

Typ.*

Max.

Unit

Emitter

VF

Input Forward Voltage

IF = 10 mA

1.05

1.3

V

IR

Reverse Leakage Current

VR = 6.0 V

0.1

100

µA

C

Capacitance

18

pF

Detector

ICEO1

Collector-Emitter Dark Current

VCE = 10 V, TA = 25°C

1.0

50

nA

ICEO2

VCE = 10 V, TA = 100°C

1.0

µA

BVCEO

Collector-Emitter Breakdown

Voltage

IC = 100 µA

30

90

V

BVECO

Emitter-Collector Breakdown

Voltage

IE = 100 µA

7.0

7.8

V

CCE

Collector-Emitter Capacitance

f = 1.0 MHz, VCE = 0 V

7.0

pF

Coupled

CTR

Current Transfer Ratio(4)

IF = 1.0 mA, VCE = 5 V

100

130

%

VCE (sat) Collector-Emitter Saturation

Voltage

IC = 2.0 mA, IF = 10 mA

0.35

0.4

V

ton

Turn-On Time

IC = 2.0 mA, VCC = 10 V, RL = 100 Ω

(Fig. 8)

7.5

µs

toff

Turn-Off Time

IC = 2.0 mA, VCC = 10 V, RL = 100 Ω

(Fig. 8)

5.7

µs

tr

Rise Time

IC = 2.0 mA, VCC = 10 V, RL = 100 Ω

(Fig. 8)

3.2

µs

tf

Fall Time

IC = 2.0 mA, VCC = 10 V, RL = 100 Ω

(Fig. 8)

4.7

µs

VISO

Isolation Surge Voltage(1)(2)(3)

f = 60 Hz, t = 1 minute

2500

Vac(rms)

RISO

Isolation Resistance(2)

VI-O = 500 V

1011

Ω

CISO

Isolation Capacitance(2)

VI-O = 0 V, f = 1 MHz

0.2

pF

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