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CSD18537NQ5A Datasheet(PDF) 1 Page - Texas Instruments |
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CSD18537NQ5A Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page  0 4 8 12 16 20 24 28 32 36 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 12A TC = 125ºC Id = 12A G001 0 1 2 3 4 5 6 7 8 9 10 0 3 6 9 12 15 Qg - Gate Charge (nC) ID = 12A VDS = 30V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 CSD18537NQ5A www.ti.com SLPS391 – JUNE 2013 60-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18537NQ5A 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to Source Voltage 60 V • Avalanche Rated Qg Gate Charge Total (10V) 14 nC Qgd Gate Charge Gate to Drain 2.3 nC • Pb Free Terminal Plating VGS = 6V 13 m Ω • RoHS Compliant RDS(on) Drain to Source On Resistance VGS = 10V 10 m Ω • Halogen Free VGS(th) Threshold Voltage 3.0 V • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION APPLICATIONS Device Package Media Qty Ship • High Side Synchronous Buck Converter SON 5-mm × 6-mm 13-Inch Tape and CSD18537NQ5A 2500 Plastic Package Reel Reel • Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION TA = 25°C VALUE UNIT The NexFET™ power MOSFET has been designed VDS Drain to Source Voltage 60 V to minimize losses in power conversion applications. VGS Gate to Source Voltage ±20 V Top View Continuous Drain Current (Package limited), 50 TC = 25°C ID Continuous Drain Current (Silicon limited), A 62 TC = 25°C Continuous Drain Current, TA = 25°C (1) 11 IDM Pulsed Drain Current, TA = 25°C (2) 72 A PD Power Dissipation(1) 3.2 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 55 mJ ID = 33A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 40°C/W on a 1-inch 2, 2-oz. Cu pad on a 0.06- inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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