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MRF6402 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF6402
Description  RF POWER TRANSISTOR NPN SILICON
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MRF6402 Datasheet(HTML) 1 Page - Motorola, Inc

   
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1
MRF6402
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6402 is designed for 1.8 GHz Personal Communications Network
(PCN) base stations applications. It incorporates high value emitter ballast
resistors, gold metallizations and offers a high degree of reliability and
ruggedness. For ease of design, this transistor has an internally matched input.
• To be used in Class AB for PCN and Cellular Radio Applications
• Specified 26 V, 1.88 GHz Characteristics
Output Power — 4.5 Watts
Gain — 10 dB Typ
Efficiency — 45% Typ
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCER
40
Vdc
Collector–Base Voltage
VCBO
45
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector–Current — Continuous
IC
0.7
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
15
0.2
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (1)
R
θJC
5
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ω)
V(BR)CER
40
Vdc
Emitter–Base Breakdown Voltage
(IE = 5 mAdc)
V(BR)EBO
3.5
Vdc
Collector–Base Breakdown Voltage (IC = 10 mAdc)
V(BR)CBO
40
Vdc
Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω)
ICER
5
mA
(1) Thermal resistance is determined under specified RF operating condition.
(continued)
Order this document
by MRF6402/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF6402
4.5 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 2
© Motorola, Inc. 1997
REV 7


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