IR1169S

11

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© 2012 International Rectifier

December 12, 2012

Detailed Pin Description

VCC: Power Supply

This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn

off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC.

To prevent noise problems, a bypass ceramic capacitor connected to Vcc and COM should be placed as close as

possible to the IR1169. This pin is internally clamped.

SYNC: Direct Turn-off and Reset

SYNC is used to directly turn-off the SR MOSFET by an external signal. The gate output of IR1169 is low when

55ns. The turn-off of SYNC is a direct control and it ignores the MOT time (override).

The SYNC pin will reset MOT and Blanking time when SYNC switches from low to high. It will reset MOT timer

and Blanking timer only at the rising edge of signal. This function is useful for very low output voltage condition

(such as overload or short circuit) where the VD voltage is too low to reach Vth3 threshold to reset the timers.

SYNC pin also can be used to control the turn-on time of SR MOSFET (adding additional delay time at turn-on for

noise immunity).

If not used, SYNC pin should be connected to GND.

MOT: Minimum On Time

gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger the input

comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time.

The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to COM.

EN: Enable

This pin is used to activate the IC “sleep” mode by pulling the voltage level below 1.6V (typ). In sleep mode the IC

will consume a minimum amount of current. All switching functions will be disabled and the gate will be inactive.

VD: Drain Voltage Sense

VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be

taken in properly routing the connection to the power MOSFET drain.

VS: Source Voltage Sense

VS is the differential sense pin for the power MOSFET Source. This pin should be connected directly to the power

ground pin (7) but must be used to create a kelvin contact as close as possible to the power MOSFET source pin.

GND: Ground

This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to

this point.

VGATE: Gate Drive Output

This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak

sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate

resistor is recommended, especially when putting multiple FETs in parallel.

Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal

switching performance.