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RJK0390DPA Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK0390DPA Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK0390DPA Preliminary R07DS0922EJ0300 Rev.3.00 Page 4 of 6 Mar 21, 2013 Case Temperature Tc (°C) Static Drain to Source On State Resistance vs. Temperature 6.0 4.8 3.6 2.4 1.2 –25 0 25 50 75 100 125 150 0 ID = 5 A, 10 A, 20 A VGS = 4.5 V 10 V Pulse Test 5 A, 10 A, 20 A Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating 100 80 60 40 20 25 50 75 100 125 150 0 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 100 80 60 40 20 0 0.4 0.8 1.2 1.6 2.0 Pulse Test 5 V VGS = 0, –5 V 10 V Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 010 30 20 100000 30000 10000 3000 1000 300 100 VGS = 0 f = 1 MHz Crss Coss Ciss Gate Charge Qg (nC) Dynamic Input Characteristics 50 40 30 20 10 0 20 16 12 8 4 40 80 120 160 200 0 0 ID = 65 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V |
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