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PTVS10VP1UP Datasheet(PDF) 3 Page - NXP Semiconductors

Part # PTVS10VP1UP
Description  600 W Transient Voltage Suppressor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PTVS10VP1UP Datasheet(HTML) 3 Page - NXP Semiconductors

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PTVSXP1UP_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 6 January 2011
3 of 12
NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5.
Limiting values
[1]
In accordance with IEC 61643-321 (10/1000
μs current waveform).
[1]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
[2]
Soldering point of cathode tab.
6.
Thermal characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4]
Soldering point of cathode tab.
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PPPM
rated peak pulse power
[1] -600
W
IPPM
rated peak pulse current
[1] -see
Table 9
and 10
IFSM
Non-repetitive peak
forward current
single half-sine
wave; tp =8.3 ms
-100
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 6.
ESD maximum ratings
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
[1][2] -30
kV
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1] --200
K/W
[2] --120
K/W
[3] --60
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[4] --12
K/W


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