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MCIMX6D1EYM08AC Datasheet(PDF) 36 Page - Freescale Semiconductor, Inc |
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MCIMX6D1EYM08AC Datasheet(HTML) 36 Page - Freescale Semiconductor, Inc |
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36 / 165 page  i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors, Rev. 2.3 36 Freescale Semiconductor Electrical Characteristics 4.6 I/O DC Parameters This section includes the DC parameters of the following I/O types: • General Purpose I/O (GPIO) • Double Data Rate I/O (DDR) for LPDDR2 and DDR3/DDR3L modes • LVDS I/O •MLB I/O NOTE The term ‘OVDD’ in this section refers to the associated supply rail of an input or output. Figure 3. Circuit for Parameters Voh and Vol for I/O Cells Bias resistor — 14 M — This the integrated bias resistor that sets the amplifier into a high gain state. Any leakage through the ESD network, external board leakage, or even a scope probe that is significant relative to this value will debias the amplifier. The debiasing will result in low gain, and will impact the circuit's ability to start up and maintain oscillations. Target Crystal Properties Cload — 10 pF — Usually crystals can be purchased tuned for different Cloads. This Cload value is typically 1/2 of the capacitances realized on the PCB on either side of the quartz. A higher Cload will decrease oscillation margin, but increases current oscillating through the crystal. ESR — 50 k 100 k Equivalent series resistance of the crystal. Choosing a crystal with a higher value will decrease the oscillating margin. Table 21. OSC32K Main Characteristics (continued) Parameter Min Typ Max Comments 0 or 1 Predriver pdat ovdd pad nmos (Rpd) ovss Voh min Vol max pmos (Rpu) |
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