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FGAF20N60SMD Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FGAF20N60SMD Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGAF20N60SMD Rev. C2 April 2013 Absolute Maximum Ratings Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Symbol Description Ratings Unit VCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ± 20 V IC Collector Current @ TC = 25 oC 40 A Collector Current @ TC = 100 oC 20 A ICM (1) Pulsed Collector Current 60 A IF Diode Forward Current @ TC = 25 oC 20 A Diode Forward Current @ TC = 100 oC 10 A IFM (1) Pulsed Diode Maximum Forward Current 60 A PD Maximum Power Dissipation @ TC = 25 oC 75 W Maximum Power Dissipation @ TC = 100 oC 37.5 W TJ Operating Junction Temperature -55 to +175 oC Tstg Storage Temperature Range -55 to +175 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC G E C FGAF20N60SMD 600 V, 20 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = 175 oC • Positive Temperaure Co-efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A • High Input Impedance • Fast Swiching: EOFF = 7 uJ/A • Tightened Parameter Distribution • RoHS Compliant Applications • Sewing Machine, CNC • Home Appliances, Motor-Control General Description Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum perfor- mance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. |
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