FGAF20N60SMD datasheet(1/10 Pages) FAIRCHILD

Part #	FGAF20N60SMD

Description	600 V, 20 A Field Stop IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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FGAF20N60SMD Rev. C2

April 2013

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Symbol

Description

Ratings

Unit

VCES

Collector to Emitter Voltage

600

V

VGES

Gate to Emitter Voltage

± 20

V

IC

Collector Current

@ TC = 25

oC

40

A

Collector Current

@ TC = 100

oC

20

A

ICM (1)

Pulsed Collector Current

60

A

IF

Diode Forward Current

@ TC = 25

oC

20

A

Diode Forward Current

@ TC = 100

oC

10

A

IFM (1)

Pulsed Diode Maximum Forward Current

60

A

PD

Maximum Power Dissipation

@ TC = 25

oC

75

W

Maximum Power Dissipation

@ TC = 100

oC

37.5

W

TJ

Operating Junction Temperature

-55 to +175

oC

Tstg

Storage Temperature Range

-55 to +175

oC

TL

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

300

oC

G

E

C

FGAF20N60SMD

600 V, 20 A Field Stop IGBT

Features

• Maximum Junction Temperature : TJ = 175

oC

• Positive Temperaure Co-efficient for easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.7 V(Typ.) @ IC = 20 A

• High Input Impedance

• Fast Swiching: EOFF = 7 uJ/A

• Tightened Parameter Distribution

• RoHS Compliant

Applications

• Sewing Machine, CNC

• Home Appliances, Motor-Control

General Description

Using novel field stop IGBT technology, Fairchild®’s new series

of field stop 2nd generation IGBTs offer the optimum perfor-

mance for solar inverter, UPS, welder and PFC applications

where low conduction and switching losses are essential.

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FGAF20N60SMD Datasheet(PDF) 1 Page - Fairchild Semiconductor

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