2SK2788_11 datasheet(2/7 Pages) RENESAS

Part #	2SK2788

Description	Silicon N Channel MOS FET High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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2 / 7 page

HAT2203C

Preliminary

R07DS0323EJ0500 Rev.5.00

Page 2 of 6

Mar 28, 2011

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to Source breakdown voltage

V(BR)DSS

20

—

V

ID = 10 mA, VGS = 0

Gate to Source breakdown voltage

V(BR)GSS

±12

IG = 100 A, VDS = 0

Gate to Source leak current

IGSS

—

±10

A

VGS = 10 V, VDS = 0

Drain to Source leak current

IDSS

—

1

A

VDS = 20 V, VGS = 0

Gate to Source cutoff voltage

VGS(off)

0.4

—

1.4

V

VDS = 10 V, ID = 1 mA

RDS(on)

—

69

90

m



ID = 1 A, VGS = 4.5 V

Note3

Drain to Source on state resistance

RDS(on)

—

107

150

m



ID = 1 A, VGS = 2.5 V

Note3

Forward transfer admittance

|yfs|

3

4.5

—

S

ID = 1 A, VDS = 10 V

Note3

Input capacitance

Ciss

—

165

—

pF

VDS = 10 V

Output capacitance

Coss

—

50

—

pF

VGS = 0

Reverse transfer capacitance

Crss

—

20

—

pF

f = 1 MHz

Turn - on delay time

td(on)

—

6

—

ns

Rise time

tr

—

5

—

ns

Turn - off delay time

td(off)

—

20

—

ns

Fall time

tf

—

4

—

ns

ID = 1 A

VGS = 10 V

RL = 10 

Rg = 4.7



Total Gate charge

Qg

—

1.8

—

nC

Gate to Source charge

Qgs

—

0.4

—

nC

Gate to Drain charge

Qgd

—

0.4

—

nC

VDD = 10 V

VGS = 4.5 V

ID = 2 A

Body - Drain diode forward voltage

VDF

—

0.8

1.1

V

IF = 2 A, VGS = 0

Note3

Notes: 3. Pulse test

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