Electronic Components Datasheet Search |
|
R1QBA3618CBG Datasheet(PDF) 1 Page - Renesas Technology Corp |
|
R1QBA3618CBG Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 38 page PAGE : 1 Rev. 0.09a : 2011.09.14 Rev. 0.09a 2011.09.14 R1QBA36**CB* / R1QEA36**CB* Series Features Power Supply • 1.8 V for core (V DD), 1.4 V to VDD for I/O (VDDQ) Clock • Fast clock cycle time for high bandwidth • Two input clocks (K and /K) for precise DDR timing at clock rising edges only • Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems • Clock-stop capability with s restart I/O • Common data input/output bus • Pipelined double data rate operation • HSTL I/O • User programmable output impedance • DLL/PLL circuitry for wide output data valid window and future frequency scaling • Data valid pin (QVLD) to indicate valid data on the output Function • Two-tick burst for low DDR transaction size • Internally self-timed write control • Simple control logic for easy depth expansion • JTAG 1149.1 compatible test access port Package • 165 FBGA package (15 x 17 x 1.4 mm) Description The R1Q#A3636 is a 1,048,576-word by 36-bit and the R1Q#A3618 is a 2,097,152-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. # = B: Latency =2.5, w/o ODT # = H: Latency =2.0, w/o ODT # = E: Latency =2.5, w/ ODT # = L: Latency =2.0, w/ ODT 36-Mbit DDRII+ SRAM 2-word Burst R1QBA3636CBG / R1QBA3618CBG / R1QBA3609CBG R1QEA3636CBG / R1QEA3618CBG / R1QEA3609CBG R1QHA3636CBG / R1QHA3618CBG / R1QHA3609CBG R1QLA3636CBG / R1QLA3618CBG / R1QLA3609CBG Notes: 1. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, Samsung, and Renesas Electronics Corp. (QDR Co-Development Team) 2. The specifications of this device are subject to change without notice. Please contact your nearest Renesas Electronics Sales Office regarding specifications. 3. Refer to "http://www.renesas.com/products/memory/fast_sram/qdr_sram/qdr_sram_root.jsp" for the latest and detailed information. 4. Descriptions about x9 parts in this datasheet are just for reference. R10DS0159EJ0009 R10DS0159EJ0009 |
Similar Part No. - R1QBA3618CBG |
|
Similar Description - R1QBA3618CBG |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |